Cascode cmos rf power amplifier with programmable feedback cascode bias under multiple supply voltages

ABSTRACT

A Radio Frequency (RF) cascode power amplifier operates with differing battery supply voltages. A transconductance stage has a transistor with an RF signal input at its gate. A cascode stage has at least one cascode transistor, the cascode stage coupled in series with the transconductance stage between a battery voltage node and ground, the cascode stage having an RF signal output at the battery voltage node and at least one bias input to the at least one cascode transistor. Cascode bias feedback circuitry applies fixed bias voltage(s) to the at least one two bias inputs for a low battery voltage and applies feedback bias voltage(s) to the at least two bias inputs for a high battery voltage, the feedback bias voltage(s) based upon a voltage of the battery voltage node. More than two differing battery supply voltages are supported.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present U.S. Utility patent application claims priority pursuant to35 U.S.C. §120, as a continuation, to U.S. Utility patent applicationSer. No. 12/428,616, entitled “Cascode CMOS RF Power Amplifier withProgrammable Feedback Cascode Bias Under Multiple Supply Voltages,”(Attorney Docket No. BP20488), filed Apr. 23, 2009, co-pending, issuedas U.S. Pat. No. 7,786,807, which is hereby incorporated herein byreference in its entirety and made part of the present U.S. Utilitypatent application for all purposes.

BACKGROUND

1. Technical Field

This invention relates generally to wireless communication systems andmore particularly to Radio Frequency power amplifiers used intransmitters of wireless devices within such communication systems.

2. Related Art

Communication systems are known to support wireless and wire linedcommunications between wireless and/or wire lined communication devices.Such communication systems range from national and/or internationalcellular telephone systems to the Internet to point-to-point in-homewireless networks. Each type of communication system is constructed, andhence operates, in accordance with one or more communication standards.For instance, wireless communication systems may operate in accordancewith one or more standards including, but not limited to, IEEE 802.11x,Bluetooth, wireless wide area networks (e.g., WiMAX), advanced mobilephone services (AMPS), digital AMPS, global system for mobilecommunications (GSM), North American code division multiple access(CDMA), Wideband CDMA, local multi-point distribution systems (LMDS),multi-channel-multi-point distribution systems (MMDS), radio frequencyidentification (RFID), Enhanced Data rates for GSM Evolution (EDGE),General Packet Radio Service (GPRS), and many others.

Depending on the type of wireless communication system, a wirelesscommunication device, such as a cellular telephone, two-way radio,personal digital assistant (PDA), personal computer (PC), laptopcomputer, home entertainment equipment, RFID reader, RFID tag, et ceteracommunicates directly or indirectly with other wireless communicationdevices. For direct communications (also known as point-to-pointcommunications), the participating wireless communication devices tunetheir receivers and transmitters to the same channel or channels (e.g.,one of the plurality of radio frequency (RF) carriers of the wirelesscommunication system or a particular RF frequency for some systems) andcommunicate over that channel(s). For indirect wireless communications,each wireless communication device communicates directly with anassociated base station (e.g., for cellular services) and/or anassociated access point (e.g., for an in-home or in-building wirelessnetwork) via an assigned channel. To complete a communication connectionbetween the wireless communication devices, the associated basestations, and/or associated access points communicate with each otherdirectly, via a system controller, via the public switch telephonenetwork, via the Internet, and/or via some other wide area network.

For each wireless communication device to participate in wirelesscommunications, it includes a built-in radio transceiver (i.e., receiverand transmitter) or is coupled to an associated radio transceiver (e.g.,a station for in-home and/or in-building wireless communicationnetworks, RF modem, etc.). As is known, the receiver is coupled to anantenna and includes a low noise amplifier, one or more intermediatefrequency stages, a filtering stage, and a data recovery stage. The lownoise amplifier receives inbound RF signals via the antenna andamplifies then. The one or more intermediate frequency stages mix theamplified RF signals with one or more local oscillations to convert theamplified RF signal into baseband signals or intermediate frequency (IF)signals. The filtering stage filters the baseband signals or the IFsignals to attenuate unwanted out of band signals to produce filteredsignals. The data recovery stage recovers raw data from the filteredsignals in accordance with the particular wireless communicationstandard. As is also known, the transmitter includes a data modulationstage, one or more intermediate frequency stages, and a power amplifier.The data modulation stage converts raw data into baseband signals inaccordance with a particular wireless communication standard. The one ormore intermediate frequency stages mix the baseband signals with one ormore local oscillations to produce RF signals. The power amplifieramplifies the RF signals prior to transmission via an antenna.

Most, if not all wireless communication standards limit transmittedpower level. Further, some wireless communication standards includereverse link power control, which allows a remote device to controltransmit power of another wireless device, e.g., base station controlsreverse link transmit power of hand held devices. Thus, in most if notall wireless devices, the power amplifier is actively controlled tothereby control transmit power. Shortcomings exist with respect to theefficiency of the power amplifier. When the power amplifier is matchedwell with the antenna, efficient transmission results. However, ifmismatch is present, inefficiency results. Such inefficiency results inexcess power drain (by the power amplifier) as well as reduction intransmit power. This mismatch can occur due to operational variations ofthe antenna, e.g., alteration of input impedance due to antennaconfiguration/position, as well as operational variations of the poweramplifier and other RF signal path components of the wireless device dueto temperature fluctuations, voltage supply variations, etc. In wirelesscommunication devices, the power amplifier is often required to providea high swing at its output. The power amplifier must also be very linearin its operation and also use as little power as possible. Thesecompeting goals are very difficult to meet, particularly in portabledevices that are battery powered and that operate at relatively lowvoltages.

BRIEF SUMMARY OF THE INVENTION

The present invention is directed to apparatus and methods of operationthat are further described in the following Brief Description of theDrawings, the Detailed Description of the Invention, and the claims.Other features and advantages of the present invention will becomeapparent from the following detailed description of the invention madewith reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a system diagram illustrating a wireless communication systemconstructed and operating according to one or more embodiments of thepresent invention;

FIG. 2 is a block diagram illustrating components of a wireless deviceconstructed and operating according to the present invention;

FIG. 3 is a schematic block diagram illustrating a wirelesscommunication device that includes a host device and an associatedradio;

FIG. 4 is a block diagram illustrating a Radio Frequency (RF) cascodepower amplifier constructed according to one or more embodiments of thepresent invention;

FIG. 5 is a block diagram illustrating another embodiment of an RF poweramplifier constructed according to one or more embodiments of thepresent invention;

FIG. 6 is a circuit diagram illustrating a portion of an RF poweramplifier constructed according to one or more embodiments of thepresent invention;

FIG. 7 is a block diagram illustrating a differential embodiment of anRF power amplifier constructed according to one or more embodiments ofthe present invention; and

FIG. 8 is a flow chart illustrating a method for operating an RF cascodepower amplifier supplied by differing battery supply voltage levelsaccording to one or more embodiments of the present invention.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 is a system diagram illustrating a wireless communication systemconstructed and operating according to one or more embodiments of thepresent invention. The wireless communication system 100 of FIG. 1includes a communication infrastructure and a plurality of wirelessdevices. The communication infrastructure includes one or more cellularnetworks 104, one or more wireless local area networks (WLANs) 106, andone or more wireless wide area networks (WWANs) 108. The cellularnetworks 104, WLANs 106, WWANs 108 all typically couple to one or morebackbone networks. The backbone networks 102 may include the Internet,the Worldwide Web, one or more public switched telephone networkbackbones, one or more cellular network backbones, one or more privatenetwork backbones and/or other types of backbones that supportcommunications with the various wireless network infrastructures 104,106, and 108. Server computers may couple to these various networkinfrastructures. For example, server computer 110 couples to cellularnetwork 104, web server 112 couples to the Internet/WWW/PSTN/Cellnetwork 102, and server 114 couples to WWAN network 108. Other devicesmay couple to these networks as well in various other constructs.

Each of the cellular networks 104, WLANs 106, and WWANs 108 supportwireless communications with wireless devices in various wirelessspectra and according to various communication protocol standards. Forexample, the cellular network 104 may support wireless communicationswith wireless devices within the 800 MHz band and the 1900 MHz band,and/or other Radio Frequency (RF) bands that are allocated for cellularnetwork communications. The cellular network 104 may support GSM, EDGE,GPRS, 3G, CDMA, TDMA, and/or various other standardized communications.Of course, these are examples only and should not be considered to limitthe spectra or operations used by such cellular networks. The WLANs 106typically operate within the Industrial, Scientific, and Medical (ISM)bands that include the 2.4 GHz and 5.8 GHz bands. The ISM bands includeother frequencies as well that support other types of wirelesscommunications, such bands including the 6.78 MHz, 13.56 MHz, 27.12 MHz,40.68 MHz, 433.92 MHz, 915 MHz, 24.125 GHz, 61.25 GHz, 122.5 GHz, and245 GHz bands. The WWANs networks 108 may operate within differing RFspectra based upon that which is allocated at any particular locale.Device to device communications may be serviced in one of thesefrequency bands as well.

The wireless network infrastructures 104, 106, and 108 supportcommunications to and from wireless devices 116, 118, 122, 124, 126,128, 130, 132, and/or 136. Various types of wireless devices areillustrated. These wireless devices include laptop computers 116 and118, desktop computers 122 and 124, cellular telephones 126 and 128,portable beta terminals 130, 132, and 136. Of course, differing types ofdevices may be considered wireless devices within the context of thescope of the present invention. For example, automobiles themselveshaving cellular interfaces would be considered wireless devicesaccording to the present invention. Further, any device having awireless communications interface either bi-directional oruni-directional, may be considered a wireless device according to thepresent invention, in various other types of wireless devices. Forexample, wireless devices may include Global Positioning System (GPS)receiving capability to receive positioning signals from multiple GPSsatellites 150.

The wireless devices 116-136 may support peer-to-peer communications aswell, such peer-to-peer communications not requiring the support of awireless network infrastructure. For example, these devices maycommunicate with each other in a 60 GHz spectrum, may use a peer-to-peercommunications within a WLAN spectrum, for example, or may use othertypes of peer-to-peer communications. For example, within the ISMspectra, wireless devices may communicate according to Bluetoothprotocol or any of the various available WLAN protocols supported byIEEE802.11x, for example.

As will be further described with reference to FIGS. 2-8, each of thewireless devices 116-136 illustrated in FIG. 1 includes basebandprocessing circuitry, Radio Frequency (RF) transceiver, and at least oneantenna. According to the present invention, the RF transceiver includesan RF power amplifier constructed and operating according to the presentinvention. The RF power amplifiers of these devices are power efficientand able to operate at multiple battery voltages without requiring avoltage regulator.

FIG. 2 is a block diagram illustrating components of a wireless deviceconstructed and operating according to the present invention. Thewireless device includes host circuitry 204, RF transceiver 202, antennainterface 206, and a plurality of antenna elements 208A, 208B, 208C, and208N. In some embodiments of the wireless device of FIG. 2, the antennamay include only a single antenna element. However, as shown, in FIG. 2the antenna may have a plurality of antenna elements 208A-208N which areconfigurable by the antenna interface 206. Configurability via antennainterface 206 may include operation with directionality, MIMO, or othermultiple antenna configurations.

Host circuitry 204 may include processing circuitry, memory, userinterfaces, wired interfaces, and/or other circuitry associated with thewireless device. For example, wireless devices typically have a display,a keyboard, and/or multiple other user interface devices. Further, thewireless device includes one or more batteries for powering the wirelessdevice. The RF transceiver 202 includes baseband processing circuitry210 and RF circuitry 212. The baseband processing circuitry 210 producesan outgoing baseband signal 220 to a transmitter section 216 of the RFcircuitry 212. Receiver section 214 of the RF circuitry 212 produces anincoming baseband signal 218 to the baseband processing circuitry 210.RF circuitry 212 produces an outgoing RF signal from transmitter section216 to antenna interface 206. The antenna interface 206 couples theoutgoing RF signal to one or more of the plurality of antenna elements208A-208N. Receiver section 214 of RF circuitry 212 receives an incomingRF signal from antenna interface 206 and converts the incoming RF signalto the incoming baseband signal 218. Likewise, the transmitter section216 converts the outgoing baseband signal 220 to the outgoing RF signalwhich the transmitter section 216 produces to antenna interface 206.

According to the present invention, the transmitter section includes atleast one RF power amplifier that can operate at multiple batteryvoltages. The RF power amplifier has a cascode structure in someembodiments and has cascode bias feedback circuitry that provides atleast one bias voltage to a cascode stage of the amplifier. Variousembodiments according to the present invention will be described furtherherein with reference to FIGS. 3-8.

FIG. 3 is a schematic block diagram illustrating a wirelesscommunication device that includes a host device and an associatedradio. For cellular telephone hosts, the radio 360 is a built-incomponent. For personal digital assistants hosts, laptop hosts, and/orpersonal computer hosts, the radio 360 may be built-in or may be anexternally coupled component that couples to the host device 302 via acommunication link, e.g., PCI interface, PCMCIA interface, USBinterface, or another type of interface.

As illustrated, the host device 302 includes a processing module 350,memory 352, radio interface 354, input interface 358, and outputinterface 356. The processing module 350 and memory 352 execute thecorresponding instructions that are typically done by the host device.For example, for a cellular telephone host device, the processing module350 performs the corresponding communication functions in accordancewith a particular cellular telephone standard.

The radio interface 354 allows data to be received from and sent to theradio 360. For data received from the radio 360 (e.g., inbound data),the radio interface 354 provides the data to the processing module 350for further processing and/or routing to the output interface 356. Theoutput interface 356 provides connectivity to an output display devicesuch as a display, monitor, speakers, et cetera, such that the receiveddata may be displayed. The radio interface 354 also provides data fromthe processing module 350 to the radio 360. The processing module 350may receive the outbound data from an input device such as a keyboard,keypad, microphone, et cetera via the input interface 358 or generatethe data itself. For data received via the input interface 358, theprocessing module 350 may perform a corresponding host function on thedata and/or route it to the radio 360 via the radio interface 354.

Radio 360 includes a host interface 362, baseband processingcircuitry/baseband processing module 364, an analog-to-digital converter(ADC) 366, a filtering/gain/attenuation module 368, an IF mixing downconversion stage 370, a receiver filter 371, a low noise amplifier (LNA)372, a transmitter/receiver switch 373, a local oscillation module 374,memory 375, a digital-to-analog converter (DAC) 378, afiltering/gain/attenuation module 380, an IF mixing up conversion stage382, a power amplifier (PA) 384, a transmitter filter module 385, andone or more antennas 386. The antenna 386 may be a single antenna thatis shared by the transmit and receive paths as regulated by the Tx/Rxswitch 373, or may include separate antennas for the transmit path andreceive path. The antenna implementation will depend on the particularstandard to which the wireless communication device is compliant and theparticular design of the device.

The baseband processing circuitry 364, in combination with operationalinstructions stored in memory 375, executes digital receiver functionsand digital transmitter functions. The digital receiver functionsinclude, but are not limited to, digital intermediate frequency tobaseband conversion, demodulation, constellation demapping, decoding,and/or descrambling. The digital transmitter functions include, but arenot limited to, scrambling, encoding, constellation mapping, modulation,and/or digital baseband to IF conversion. The baseband processingcircuitry 364 may be implemented using a shared processing device,individual processing devices, or a plurality of processing devices.Such a processing device may be a microprocessor, micro-controller,digital signal processor, microcomputer, central processing unit, fieldprogrammable gate array, programmable logic device, state machine, logiccircuitry, analog circuitry, digital circuitry, and/or any device thatmanipulates signals (analog and/or digital) based on operationalinstructions. The memory 375 may be a single memory device or aplurality of memory devices. Such a memory device may be a read-onlymemory, random access memory, volatile memory, non-volatile memory,static memory, dynamic memory, flash memory, and/or any device thatstores digital information. Note that when the baseband processingcircuitry 364 implements one or more of its functions via a statemachine, analog circuitry, digital circuitry, and/or logic circuitry,the memory storing the corresponding operational instructions isembedded with the circuitry comprising the state machine, analogcircuitry, digital circuitry, and/or logic circuitry. The memory 375stores, and the baseband processing circuitry 364 executes, operationalinstructions that facilitate functionality of the device.

In operation, the radio 360 receives outbound data 394 from the hostdevice via the host interface 362. The host interface 362 routes theoutbound data 394 to the baseband processing circuitry 364, whichprocesses the outbound data 394 in accordance with a particular wirelesscommunication standard (e.g., Cellular, WiMAX, IEEE802.11a, IEEE802.11b,IEEE802.11g, IEEE802.11n, Bluetooth, et cetera) to produce digitaltransmission formatted data/outgoing baseband signal 396. The digitaltransmission formatted data 396 will be a digital base-band signal or adigital low IF signal, where the low IF typically will be in thefrequency range of one hundred kilohertz to a few megahertz.

The digital-to-analog converter 378 converts the digital transmissionformatted data 396 from the digital domain to the analog domain. Thefiltering/gain/attenuation module 380 filters and/or adjusts the gain ofthe analog signal prior to providing it to the IF mixing stage 382. TheIF mixing stage 382 directly or via multiple conversion steps (superheterodyne) converts the analog baseband or low IF signal into an RFsignal based on a transmitter local oscillation 383 provided by localoscillation module 374. The power amplifier (PA) 384 amplifies the RFsignal to produce outbound RF signal 398, which is filtered by thetransmitter filter module 385. The antenna 386 transmits the outbound RFsignal 398 to a targeted device such as a base station, an access point,and/or another wireless communication device.

The radio 360 also receives an inbound RF signal 388 via the antenna386, which was transmitted by a base station, an access point, oranother wireless communication device. The antenna 386 provides theinbound RF signal 388 to the receiver filter module 371 via the Tx/Rxswitch 373, where the Rx filter 371 band pass filters the inbound RFsignal 388. The Rx filter 371 provides the filtered RF signal to lownoise amplifier (LNA) 372, which amplifies the signal 388 to produce anamplified inbound RF signal. The low noise amplifier 372 provides theamplified inbound RF signal to the IF mixing module 370, which directlyconverts the amplified inbound RF signal into an inbound low IF signalor baseband signal based on a receiver local oscillation 381 provided bylocal oscillation module 374. The down conversion module 370 providesthe inbound low IF signal or baseband signal to thefiltering/gain/attenuation module 368. The filtering/gain/attenuationmodule 368 may be implemented in accordance with the teachings of thepresent invention to filter and/or attenuate the inbound low IF signalor the inbound baseband signal to produce a filtered inbound signal.

The analog-to-digital converter 366 converts the filtered inbound signalfrom the analog domain to the digital domain to produce digitalreception formatted data/incoming baseband signal 390. The basebandprocessing circuitry 364 decodes, descrambles, demaps, and/ordemodulates the digital reception formatted data 390 to recaptureinbound data 392 in accordance with the particular wirelesscommunication standard being implemented by radio 360. The hostinterface 362 provides the recaptured inbound data 392 to the hostdevice 18-32 via the radio interface 354.

As one of average skill in the art will appreciate, the wirelesscommunication device of FIG. 3 may be implemented using one or moreintegrated circuits. For example, the host device may be implemented onone integrated circuit, the baseband processing circuitry 364, andmemory 375 may be implemented on a second integrated circuit, and theremaining components of the radio 360, less the antenna(s) 386, may beimplemented on a third integrated circuit. As an alternate example, theradio 360 may be implemented on a single integrated circuit. As yetanother example, the processing module 350 of the host device and thebaseband processing circuitry 364 may be a common processing deviceimplemented on a single integrated circuit. Further, the memory 352 andmemory 375 may be implemented on a single integrated circuit and/or onthe same integrated circuit as the common processing modules ofprocessing module 350 and the baseband processing circuitry 364.

According to various aspects of the present invention, the PA 384 (RFpower amplifier) is operable with multiple supply voltages, withoutrequiring a voltage regulator for power. Various embodiments of the RFpower amplifier will be described further herein with reference to FIGS.4-8.

FIG. 4 is a block diagram illustrating an RF power amplifier constructedaccording to one or more embodiments of the present invention. The RFpower amplifier includes an amplifier portion 402 having atransconductance stage 408 and a cascode stage 410. The transconductancestage 408 has a transconductance device with an RF signal input operableto receive the RF input signal P_(in). The cascode stage 410 has atleast one cascode transistor and is coupled in series with thetransconductance stage 408 between a battery voltage node 404 and ground406. The cascode stage 410 has an RF signal output that produces thesignal P_(out). Further, the cascode stage 410 has at least one biasinput that is applied to a gate of the at least one cascode transistor.As illustrated in FIG. 4, the at least one bias input receives one ormore bias voltages, the number of which depends upon the number ofcascode transistors included in the cascode stage 410.

The RF power amplifier of FIG. 4 further includes cascode bias feedbackcircuitry 412. The cascode feedback bias circuitry 412 couples betweenthe battery voltage node 404 and ground 406. In its operations, whichwill be described further herein with reference to FIGS. 5-8, thecascode bias feedback circuitry 412 applies a fixed bias voltage orvoltages to the at least one bias input for at least one relativelylower battery voltage and applies at least one feedback bias voltage tothe at least one bias input of the cascode stage 410 for at least onerelatively higher battery voltage. The battery voltage upon whichcascode bias feedback circuitry 412 determines and sets the biasvoltage(s) is represented by V_(Batt) present at the battery voltagenode 404. As will be further illustrated with reference to FIGS. 5-8,the feedback bias voltage(s) is/are based upon the voltage at thebattery voltage node 404, which also serves as the signal output node toproduce signal P_(out).

In its various operations, the cascode bias feedback circuitry 412 isoperable to select one of the fixed bias voltage(s) or a feedback biasvoltage(s) based upon a DC voltage at the battery voltage node 404. Inone particular embodiment or embodiments of the present invention, theRF power amplifier of the present invention supports battery voltages of2.5 volts, 3.3 volts, 4.3 volts, and 5.5 volts. Based upon which one ofthese battery voltages is present at the battery voltage node at aparticular point and time, the cascode bias feedback circuitry 414selects either/or the feedback bias voltage or the fixed bias voltagefor application at bias input(s) to the cascode stage 410. Further,based upon the battery supply voltage level, the value of the fixed biasvoltage and/or the feedback bias voltage may differ.

FIG. 5 is a block diagram illustrating another embodiment of an RF poweramplifier constructed according to one or more embodiments of thepresent invention. As contrasted to the structure of FIG. 4, thestructure illustrated in FIG. 5 has less detail for the cascode poweramplifier 502 and more detail for embodiments of cascode bias feedbackcircuitry according to one particular structure. Both the cascode PA 502and the V_(BIAS) circuitry 506 couple between battery voltage node 404and ground 406. The cascode PA 502 receives its input from a poweramplifier driver (PAD) 504 that receives the input voltage signalP_(IN). Cascode PA 502 produces an amplified RF output signal P_(out).V_(BIAS) circuitry 506 determines a voltage level (V_(LEVEL)) of thebattery voltage node 404. The V_(BIAS) circuitry 506 further producesV_(LOW) and V_(HIGH) levels to a level shifter 510. V_(LEVEL) signal isprovided to voltage logic 508 by V_(BIAS) circuitry 506, which producesa logical output of either 0 or 1 to the level shifter 510. The levelshifter 510 produces both V_(LOW) and V_(HIGH) output signals to biasenable circuitry 512. The bias enable circuitry 512 also receives anenable signal and produces one or more V_(BIAS) signals to cascode PA502. These V_(BIAS) signals are provided to one or more gates of cascodetransistors of the cascode PA 502.

Operation of the structure of FIG. 5 will be described further hereinwith reference to FIG. 8. A particular example of structure of FIG. 5 isfurther described herein with reference to FIG. 6. A differentialconstruction of an RF power amplifier constructed according to one ormore embodiments to the present invention is illustrated in FIG. 7.

FIG. 6 is a circuit diagram illustrating a portion of an RF poweramplifier constructed according to one or more embodiments of thepresent invention. The RF power amplifier includes a transconductancestage, a cascode stage, and cascode bias feedback circuitry. Thetransconductance stage has a transistor Mb 602 (having smaller featuressizes, including a thin gate device in the embodiment) and receives a RFsignal input at its gate. The cascode stage includes two cascodetransistors Mt 606 and Mm 604 (both having larger features sizes,including thick gate devices, in the embodiment). The cascode amplifierproduces signal output signal V_(outp). Choke inductor 608 serves toblock signal flow to battery voltage node 404 and capacitor 620 servesto block DC components of the signal V_(outp). In other embodiments, ACblocking elements (inductors) and DC blocking elements (capacitors) maybe configured differently for the RF power amplifier. Further, an outputbalun (balanced/unbalanced transformer) may serve to couple differentialRF signal output to an antenna.

Cascode transistors Mm 604 and Mt 606 of the cascode stage each includebias inputs at their respective gate. The cascode feedback circuitryprovides either fixed bias voltages or feedback bias voltages to thegates of the transistor 604 and 606. The cascode bias feedback circuitryincludes a switched network coupled between the battery voltage node 404and ground. Switch network includes a plurality of lumped circuitelements R1, R2, R3, R4, and R5 and a plurality of switches swm1, swm2,swb1, and swb2. The cascode bias feedback circuitry also includes fixedbias voltage nodes V_(C1) and V_(C2), which receive the respective fixedbias voltages from other circuitry (not illustrated). For relativelyhigher battery voltages, switches swhv are closed and at least some ofswitches swm1, swm2, swb1, and swb2 are closed. Note that at least someof the plurality of lumped circuit elements of the switched network ofthe cascode bias feedback circuitry may be variable resistors.

The switch positions and resistor values of the cascode bias feedbackcircuitry are selected based upon the particular implementation of theRF power amplifier and the voltage supply level at battery voltage node404. For example, in one particular embodiment, the RF power amplifiersupports battery voltage supply levels of 2.5V, 3.3V, 4.3V, and 5.5volts. At the two lower battery supply voltage levels, 2.5V and 3.3V,fixed bias voltages, V_(C1) and V_(C2) are applied to gates of cascodetransistors Mm 604 and Mt 606, respectively (switches swlv closed andswitches swhw open). These fixed bias voltages V_(C1) and V_(C2) maydiffer for the differing battery supply voltages of 2.5V and 3.3V. Atthe two higher battery supply voltage levels, 4.3V and 5.5V, feedbackbias voltages are applied to the gates of cascode transistors Mm 604 andMt 606, as produced by the feedback switching network and based upon thevoltage present at the battery voltage node 404 (switches swhw closedand switches swlv open). Positions of switches swm1 swm2, swb 1, andswb2 and/or the set values of variable resistors R2, R3, R4, and F5 mayvary for the differing battery supply voltages of 4.3V and 5.5V.

Capacitors 614 and 616 filter out high frequency components of the biassignals V_(BIASt) and V_(BIASm). Thus, the feedback bias voltage appliedto transistors 604 and 606 are substantially DC voltage levels. When theRF power amplifier is operational (during transmit operations,calibration operations, etc.) bias voltages are applied via drivers 610and 612 to the cascode transistors. Drivers 610 and 612 are operated viaappropriate enable signals (EN) to either enable or disable the biasvoltages at transistors 606 and 604, respectively. Disabling drivers 610and 612 via appropriate levels of signal EN results in power savingsoperations by disabling the power amplifier.

FIG. 7 is a block diagram illustrating a differential embodiment of anRF power amplifier constructed according to one or more embodiments ofthe present invention. The differential RF power amplifier includessingle-ended cascode amplifiers 702 and 704. Cascode amplifier 702includes transconductance stage 706 and cascode stage 708. Cascodeamplifier 704 includes transconductance stage 710 and cascode stage 712.Bias feedback circuitry 714 applies bias voltages to one or more biasvoltage inputs of the cascode stages 708 and 712. Differential signalinputs are input to transconductance stages 710 and 706. Differentialtransconductance stage outputs are present at respective battery voltagenode 704 output points.

FIG. 8 is a flow chart illustrating a method for operating an RF cascodepower amplifier supplied by differing battery supply voltage levelsaccording to one or more embodiments of the present invention. Theoperations 800 of FIG. 8 commences with the determination of the batteryvoltage supply level (Step 802). With the structures previouslyillustrated herein with reference to FIGS. 4-7, the cascode biasfeedback circuitry determines the battery voltage supply level atbattery voltage node. Then, the cascode bias feedback circuitry comparesthe battery voltage level to at least one voltage threshold (Step 804).Because the method of the present invention supports multiple, i.e.,more than two differing battery voltage levels, in some embodiments, atleast two thresholds are required for comparison purposes. Then, basedon the comparison of Step 804, the cascode bias feedback circuitryselects cascode bias voltage input(s) (Step 806). When a relativelylower battery voltage is determined, the result at Step 806 may be toselect a fixed bias voltage for application to the cascode transistorsof the cascode RF power amplifier. However, when the determination ofStep 806 reveals that at the battery voltage node is at a relativelyhigher level, the cascode feedback bias circuitry decides to apply afeedback bias voltage or voltages to the cascode transistors of thecascode RF power amplifier.

Then, the cascode stage applies one or more selected cascode biasvoltage inputs to the cascode stage of the RF power amplifier (Step808). These operations continue until the device determines thatdiffering bias voltage(s) may be required. For example, referring againto FIG. 6, if the RF power amplifier is not needed for immediatetransmission or amplification of transmitted signals, the cascodetransistors of the cascode stage may be disabled so that powerconsumption is reduced. Further, if the device enters into a time-outsituation, as determined at Step 812, return to Step 804 may be had.Further, if the device is reset, operation would also return to Step802.

In another embodiment, the cascode bias feedback circuitry monitorscontinually or periodically the battery supply voltage level at thebattery voltage node. In such case, the cascode bias feedback circuitrymay detect a change in battery voltage at Step 810. In such case, if thebattery voltage changes, operation proceeds again to Step 802.

The terms “circuit” and “circuitry” as used herein may refer to anindependent circuit or to a portion of a multifunctional circuit thatperforms multiple underlying functions. For example, depending on theembodiment, processing circuitry may be implemented as a single chipprocessor or as a plurality of processing chips. Likewise, a firstcircuit and a second circuit may be combined in one embodiment into asingle circuit or, in another embodiment, operate independently perhapsin separate chips. The term “chip,” as used herein, refers to anintegrated circuit. Circuits and circuitry may comprise general orspecific purpose hardware, or may comprise such hardware and associatedsoftware such as firmware or object code.

The present invention has also been described above with the aid ofmethod steps illustrating the performance of specified functions andrelationships thereof. The boundaries and sequence of these functionalbuilding blocks and method steps have been arbitrarily defined hereinfor convenience of description. Alternate boundaries and sequences canbe defined so long as the specified functions and relationships areappropriately performed. Any such alternate boundaries or sequences arethus within the scope and spirit of the claimed invention.

The present invention has been described above with the aid offunctional building blocks illustrating the performance of certainsignificant functions. The boundaries of these functional buildingblocks have been arbitrarily defined for convenience of description.Alternate boundaries could be defined as long as the certain significantfunctions are appropriately performed. Similarly, flow diagram blocksmay also have been arbitrarily defined herein to illustrate certainsignificant functionality. To the extent used, the flow diagram blockboundaries and sequence could have been defined otherwise and stillperform the certain significant functionality. Such alternatedefinitions of both functional building blocks and flow diagram blocksand sequences are thus within the scope and spirit of the claimedinvention. One of average skill in the art will also recognize that thefunctional building blocks, and other illustrative blocks, modules andcomponents herein, can be implemented as illustrated or by discretecomponents, application specific integrated circuits, processorsexecuting appropriate software and the like or any combination thereof.

As may be used herein, the terms “substantially” and “approximately”provides an industry-accepted tolerance for its corresponding termand/or relativity between items. Such an industry-accepted toleranceranges from less than one percent to fifty percent and corresponds to,but is not limited to, component values, integrated circuit processvariations, temperature variations, rise and fall times, and/or thermalnoise. Such relativity between items ranges from a difference of a fewpercent to magnitude differences. As may also be used herein, theterm(s) “coupled to” and/or “coupling” and/or includes direct couplingbetween items and/or indirect coupling between items via an interveningitem (e.g., an item includes, but is not limited to, a component, anelement, a circuit, and/or a module) where, for indirect coupling, theintervening item does not modify the information of a signal but mayadjust its current level, voltage level, and/or power level. As mayfurther be used herein, inferred coupling (i.e., where one element iscoupled to another element by inference) includes direct and indirectcoupling between two items in the same manner as “coupled to.” As mayeven further be used herein, the term “operable to” indicates that anitem includes one or more of power connections, input(s), output(s),etc., to perform one or more its corresponding functions and may furtherinclude inferred coupling to one or more other items. As may stillfurther be used herein, the term “associated with,” includes directand/or indirect coupling of separate items and/or one item beingembedded within another item. As may be used herein, the term “comparesfavorably,” indicates that a comparison between two or more items,signals, etc., provides a desired relationship. For example, when thedesired relationship is that signal 1 has a greater magnitude thansignal 2, a favorable comparison may be achieved when the magnitude ofsignal 1 is greater than that of signal 2 or when the magnitude ofsignal 2 is less than that of signal 1.

The present invention has also been described above with the aid ofmethod steps illustrating the performance of specified functions andrelationships thereof. The boundaries and sequence of these functionalbuilding blocks and method steps have been arbitrarily defined hereinfor convenience of description. Alternate boundaries and sequences canbe defined so long as the specified functions and relationships areappropriately performed. Any such alternate boundaries or sequences arethus within the scope and spirit of the claimed invention.

Moreover, although described in detail for purposes of clarity andunderstanding by way of the aforementioned embodiments, the presentinvention is not limited to such embodiments. It will be obvious to oneof average skill in the art that various changes and modifications maybe practiced within the spirit and scope of the invention, as limitedonly by the scope of the appended claims.

1. Radio Frequency (RF) circuitry comprising: RF communicationscircuitry; and an RF amplifier coupled to the RF communicationscircuitry comprising: a transconductance stage having a transconductancedevice with an RF signal input; a cascode stage having at least onecascode transistor, the cascode stage coupled in series with thetransconductance stage between a battery voltage node and ground, thecascode stage having at least one bias input to the at least one cascodetransistor; and cascode bias feedback circuitry operable to: apply fixedbias voltage(s) to the at least one bias input for a low batteryvoltage; and apply feedback bias voltage(s) to the at least one biasinput for a high battery voltage, the feedback bias voltage(s) basedupon a voltage of the battery voltage node.
 2. The RF circuitry of claim1, the cascode bias feedback circuitry operable to select one of thefixed bias voltage(s) or the feedback bias voltage(s) based upon a DCvoltage of the battery voltage node.
 3. The RF circuitry of claim 1, thecascode bias feedback circuitry comprising: a switched network coupledto the battery voltage node and operable to produce the feedback biasvoltage(s); and at least one switch operable to apply one of the fixedbias voltage(s) and the feedback bias voltage(s) to the at least onebias input.
 4. The RF circuitry of claim 1, wherein: thetransconductance stage comprises a first transistor; the cascode stagecomprises second and third transistors; and a source and a drain of thefirst transistor, a source and a drain of the second transistor, and asource and a drain of the third transistor couple in series between thebattery voltage node and ground.
 5. The RF circuitry of claim 1, whereinthe RF amplifier supports at least two nominal battery voltage levels.6. The RF circuitry of claim 1, wherein the RF amplifier supports atleast four nominal battery voltage levels.
 7. The RF circuitry of claim1, wherein the RF communications circuitry supports at least one ofWireless Local Area Network (WLAN) communications, Wireless Wide AreaNetwork (WWAN) communications, Wireless Personal Area Network (WPAN)communications, and Cellular Network communications.
 8. The RF circuitryof claim 1, further comprising baseband processing circuitry coupled tothe RF circuitry.
 9. The RF circuitry of claim 8, wherein the basebandprocessing circuitry couples to host circuitry.
 10. The RF circuitry ofclaim 1, wherein the RF communications circuitry comprises: atransmitter section that produces an RF signal to the RF signal input;and a receiver section.
 11. Radio Frequency (RF) circuitry comprising: atransconductance stage having a transconductance device with an RFsignal input; a cascode stage having at least one cascode transistor,the cascode stage coupled in series with the transconductance stagebetween a battery voltage node and ground, the cascode stage having atleast one bias input to the at least one cascode transistor; and cascodebias feedback circuitry operable to: apply fixed bias voltage(s) to theat least one bias input when a battery supply voltage comparesunfavorably to a voltage threshold; and apply feedback bias voltage(s)to the at least one bias input when the battery supply voltage comparefavorably to the voltage threshold, the feedback bias voltage(s) basedupon a voltage of the battery voltage node.
 12. The RF circuitry ofclaim 11, the cascode bias feedback circuitry comprising: a switchednetwork coupled to the battery voltage node and operable to produce thefeedback bias voltage(s); and at least one switch operable to apply oneof the fixed bias voltage(s) and the feedback bias voltage(s) to the atleast one bias input.
 13. The RF circuitry of claim 11, wherein: thetransconductance stage comprises a first transistor; the cascode stagecomprises second and third transistors; and a source and a drain of thefirst transistor, a source and a drain of the second transistor, and asource and a drain of the third transistor couple in series between thebattery voltage node and ground.
 14. The RF circuitry of claim 11,wherein the RF amplifier supports at least two nominal battery voltagelevels.
 15. The RF circuitry of claim 11, wherein the RF amplifiersupports at least four nominal battery voltage levels.
 16. The RFcircuitry of claim 11, wherein the RF circuitry supports at least one ofWireless Local Area Network (WLAN) communications, Wireless Wide AreaNetwork (WWAN) communications, Wireless Personal Area Network (WPAN)communications, and Cellular Network communications.
 17. Radio Frequency(RF) circuitry contained within an RF device comprising: basebandprocessing circuitry; RF communications circuitry coupled to thebaseband processing circuitry; and an RF amplifier coupled to the RFcommunications circuitry comprising: a transconductance stage having atransconductance device with an RF signal input; a cascode stage havingat least one cascode transistor, the cascode stage coupled in serieswith the transconductance stage between a battery voltage node andground, the cascode stage having at least one bias input to the at leastone cascode transistor; and cascode bias feedback circuitry operable to:apply fixed bias voltage(s) to the at least one bias input for a lowbattery voltage; and apply feedback bias voltage(s) to the at least onebias input for a high battery voltage, the feedback bias voltage(s)based upon a voltage of the battery voltage node.
 18. The RF circuitryof claim 17, wherein the RF circuitry supports at least one of WirelessLocal Area Network (WLAN) communications, Wireless Wide Area Network(WWAN) communications, Wireless Personal Area Network (WPAN)communications, and Cellular Network communications.
 19. The RFcircuitry of claim 17, wherein the RF amplifier supports at least twonominal battery voltage levels.
 20. The RF circuitry of claim 17,wherein the baseband processing circuitry couples to host circuitry of ahost device.